Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes<xref ref-type="fn" rid="cpb141870fn1">*</xref>

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes*

Liu Ming-Gang†, Wang Yun-Qian†, Yang Yi-Bin†, Lin Xiu-Qi, Xiang Peng, Chen Wei-Jie, Han Xiao-Biao, Zang Wen-Jie, Liao Qiang, Lin Jia-Li, Luo Hui, Wu Zhi-Sheng, Liu Yang, Zhang Bai-Jun‡

Simulated current distributions of the active layers of (a, b, c) embedded narrow p-electrode LEDs and (d, e, f) embedded wide p-electrode LEDs under different injecting currents of 50, 150, and 400 mA, respectively.