Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes*
Liu Ming-Gang†, Wang Yun-Qian†, Yang Yi-Bin†, Lin Xiu-Qi, Xiang Peng, Chen Wei-Jie, Han Xiao-Biao, Zang Wen-Jie, Liao Qiang, Lin Jia-Li, Luo Hui, Wu Zhi-Sheng, Liu Yang, Zhang Bai-Jun‡
       
Light-emitting images and schematic diagrams of (a, c) the embedded wide p-electrode and (b, d) the embedded narrow p-electrode LEDs on Cu, respectively. Path A and path B represent the paths of main and secondary currents, respectively.