Energy-band alignment of atomic layer deposited (HfO2) x(Al2O3)1 − x gate dielectrics on 4H-SiC*
Jia Ren-Xua)†, Dong Lin-Penga), Niu Ying-Xib), Li Cheng-Zhanc), Song Qing-Wena), Tang Xiao-Yana), Yang Feib), Zhang Yu-Minga)
       
The J – E characteristics of 4H-SiC MOS structures with (HfO2) x (Al2O3)1 − x as the gate dielectrics. Here E = (V g –VFB) /EOT, wit V FB being the flat-band voltage.