Energy-band alignment of atomic layer deposited (HfO2) x(Al2O3)1 − x gate dielectrics on 4H-SiC*
Jia Ren-Xua)†, Dong Lin-Penga), Niu Ying-Xib), Li Cheng-Zhanc), Song Qing-Wena), Tang Xiao-Yana), Yang Feib), Zhang Yu-Minga)
       
XPS full spectra of (HfO2) x (Al2O3)1 − x samples.