Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process
Wang Taoa) , Yu Hea)† 
, Dong Xianga) , Jiang Ya-Donga) , Wu Rui-Linb)
, Dong Xiang
Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process |
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Wang Tao
, Dong Xiang |
| V 2p3/2 lines of vanadium oxides film taken at different samples with different oxygen flow. Oxygen flow is (a) 2 sccm, (b) 3.8 sccm, (c) 4.2 sccm, and (d) 6 sccm. |
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