Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process
Wang Tao
a)
, Yu He
a)†
, Dong Xiang
a)
, Jiang Ya-Dong
a)
, Wu Rui-Lin
b)
XPS spectra for N
1s
core levels for film deposited at O
2
flow rates of (a) 3.0 sccm, (b) 3.2 sccm, (c) 3.4 sccm, (d) 3.8 sccm, and (e) 5.0 sccm.