Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process
Wang Tao
a)
, Yu He
a)†
, Dong Xiang
a)
, Jiang Ya-Dong
a)
, Wu Rui-Lin
b)
Numerical results (a) and experimental curves (b) of the target voltage as a function of the O
2
flow rate at N
2
flow of 0, 2, and 4 sccm.