Effect of helium implantation on SiC and graphite*
Guo Hong-Yana),b)†, Ge Chang-Chuna),b)‡, Xia Minb)†§, Guo Li-Pingc), Chen Ji-Hongc), Yan Qing-Zhib)
       
AFM images of bulk SiC before and after He+ implantation: (a) before He+ implantation, (b) He+ implantation at RT, (c) He+ implantation at 600°C.