Effect of helium implantation on SiC and graphite*
Guo Hong-Yana),b)†, Ge Chang-Chuna),b)‡, Xia Minb)†§, Guo Li-Pingc), Chen Ji-Hongc), Yan Qing-Zhib)
       
Morphology of SiC (a) before and (b) after 20 keV He+ implantation with the fluence of 2×1017 cm−2 at 600°C.