Effect of helium implantation on SiC and graphite*
Guo Hong-Yana),b)†, Ge Chang-Chuna),b)‡, Xia Minb)†§, Guo Li-Pingc), Chen Ji-Hongc), Yan Qing-Zhib)
       
Morphology of the graphite before and after He+ implantation: (a) before He+ implantation, (b) He+ implantation at 100 keV, 1017 cm−2, 600°C, and (c) He+ implantation at 100 keV, 1017 cm−2, RT.