Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
*
Zhang Peng, Zhao Sheng-Lei, Hou Bin, Wang Chong, Zheng Xue-Feng, Ma Xiao-Hua†
, Zhang Jin-Cheng, Hao Yue
Conduction band energy at V
DS
of 150 V and V
GS
of –6 V along the cross section of AA ' in Fig. 1 .