Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors*
Zhang Peng, Zhao Sheng-Lei, Hou Bin, Wang Chong, Zheng Xue-Feng, Ma Xiao-Hua†, Zhang Jin-Cheng, Hao Yue
       
Conduction band energy at V DS of 150 V and V GS of –6   V along the cross section of AA ' in Fig.  1 .