Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors<xref ref-type="fn" rid="cpb141494fn1">*</xref>

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors*

Zhang Peng, Zhao Sheng-Lei, Hou Bin, Wang Chong, Zheng Xue-Feng, Ma Xiao-Hua†, Zhang Jin-Cheng, Hao Yue

Comparison of (a) dc transfer, V _ds = 6 V, (b) output characteristics, and (c) I _G– V _GS characteristics between devices with and without the LDD treatment.