Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors<xref ref-type="fn" rid="cpb141494fn1">*</xref>

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors*

Zhang Peng, Zhao Sheng-Lei, Hou Bin, Wang Chong, Zheng Xue-Feng, Ma Xiao-Hua†, Zhang Jin-Cheng, Hao Yue

Off-state BV in HEMTs with and without the LDD region and FP. The limitation of the testing equipment is 200 V.