Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors<xref ref-type="fn" rid="cpb141494fn1">*</xref>

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors*

Zhang Peng, Zhao Sheng-Lei, Hou Bin, Wang Chong, Zheng Xue-Feng, Ma Xiao-Hua†, Zhang Jin-Cheng, Hao Yue

Cross section of a FP HEMT with LDD treatment.