Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor*
Fan Min-Min, Xu Jing-Ping†, Liu Lu, Bai Yu-Rong, Huang Yong
       
Influences of the fringing capacitance on threshold voltage for different (a) channel lengths, (b) gate electrode thickness, (c) gate oxide thickness. The insets show variation of fringing capacitance as a function of (b) gate electrode thickness, (c) gate oxide thickness.