Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor<xref ref-type="fn" rid="cpb141583fn1">*</xref>

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor*

Fan Min-Min, Xu Jing-Ping†, Liu Lu, Bai Yu-Rong, Huang Yong

Simulated and experimental threshold voltages (a) and subthreshold swing with/without the fringing-capacitance effect (b).