New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage*
Li Qia),b), Li Hai-Oua)†, Tang Ninga), Zhai Jiang-Huia), Song Shu-Xiangc)
       
Influence of N d on the BV with (a) different t d and (b) different t ox, and the BV has a clear optimum.