New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage
*
Li Qi
a),
b)
, Li Hai-Ou
a)†
, Tang Ning
a)
, Zhai Jiang-Hui
a)
, Song Shu-Xiang
c)
Influence of N
d
on the BV with (a) different t
d
and (b) different t
ox
, and the BV has a clear optimum.