New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage*
Li Qia),b), Li Hai-Oua)†, Tang Ninga), Zhai Jiang-Huia), Song Shu-Xiangc)
       
Surface electric field, potential and charge distributions. (a) Dynamic electron and hole profile of buried oxide layer in MHFC. (b) Equipotential contour of MHFC. (c) Surface electric field distribution of MHFC and conventional device. (d) Vertical electric field and potential distribution.