New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage
*
Li Qi
a),
b)
, Li Hai-Ou
a)†
, Tang Ning
a)
, Zhai Jiang-Hui
a)
, Song Shu-Xiang
c)
(a) Cross-section of MHFC LDMOS; (b) cross-section of conventional LDMOS.