Strain analysis of free-standing strained silicon-on-insulator nanomembrane*
Sun Gao-Dia),b), Dong Lin-Xia)†, Xue Zhong-Yingb), Chen Dab), Guo Qing-Leib), Mu Zhi-Qiangb)
       
Raman spectra of SOI and sSOI suspended nanomembranes with different incident excitation laser powers. The laser power is given by the percentage to the initial power. Dashed lines denote the Raman spectra of SOI and sSOI samples without any treating for comparison.