Strain analysis of free-standing strained silicon-on-insulator nanomembrane*
Sun Gao-Dia),b), Dong Lin-Xia)†, Xue Zhong-Yingb), Chen Dab), Guo Qing-Leib), Mu Zhi-Qiangb)
       
Strain distribution and Raman shift of the suspended sSi nanomembrane along the Raman line scan shown in the inset.