Strain analysis of free-standing strained silicon-on-insulator nanomembrane*
Sun Gao-Dia),b), Dong Lin-Xia)†, Xue Zhong-Yingb), Chen Dab), Guo Qing-Leib), Mu Zhi-Qiangb)
       
(a) Cross-sectional TEM image of sSOI sample, (b) Raman spectra of strained silicon and bulk Si.