One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation<xref ref-type="fn" rid="cpb140887fn1">*</xref>

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation*

Zhang Jun, Guo Yu-Feng†, Xu Yue, Lin Hong, Yang Hui, Hong Yang, Yao Jia-Fei

Schematic diagram of the charge-sharing region, the lateral equivalent doping concentration and the electric field distribution when η > 2.