Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots*
Samavati Alirezaa)†, Othaman Z.a), Ghoshal S. K.b), Mustafa M. K.c)
       
Schematic band structures of Ge-dot/SiO2 and GeO x defects. The energies of 1.17 eV and 0.66 eV correspond to the band gaps of bulk Si and Ge respectively.