Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots*
Samavati Alirezaa)†, Othaman Z.a), Ghoshal S. K.b), Mustafa M. K.c)
       
Schematic representation of the QD transition mechanism. Si substrate diffuses into the perimeter of pyramidal Ge dots forming an Si–Ge composition. It causes misfit reduction and non-uniformity of strain across the dots leading to the formation of domes at 650 °C. EDX is recorded at the edge spot.