Influence of substrate bias voltage on the microstructure of nc-SiO x:H film |
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Li Hui-Min, Yu Wei†
 , Xu Yan-Mei, Ji Yun, Jiang Zhao-Yi, Wang Xin-Zhan, Li Xiao-Wei‡, Fu Guang-Sheng |
| (a) FTIR absorption spectrum for Si–O stretching mode of S3. The square dotted line is the experimental curve, while the solid line is the fitted line across the whole zone and the others are the Gaussian type peaks centered at different wavenumbers. (b) Plots of I Si−rich and I O−rich in the nc-SiO x :H films versus bias voltage. (c) Like Fig. 6(a) , an FTIR absorption spectrum for the Si–H stretching mode of S3 and its fitted peaks. (d) Absorption intensities of peaks centered in the range 1900 cm−1–2300 cm−1. |
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