Influence of substrate bias voltage on the microstructure of nc-SiO<sub><em> x</em></sub>:H film<xref ref-type="fn" rid="cpb141842fn1">*</xref>

Influence of substrate bias voltage on the microstructure of nc-SiO_x:H film*

Li Hui-Min, Yu Wei†, Xu Yan-Mei, Ji Yun, Jiang Zhao-Yi, Wang Xin-Zhan, Li Xiao-Wei‡, Fu Guang-Sheng

Structural properties of S3 measured with HRTEM and energy-dispersive spectrometry (EDS). (a) HRTEM image with selected area electron diffraction (SAED) pattern shown in the inset. (b) Oxygen content obtained from the EDS analysis.