Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition<xref ref-type="fn" rid="cpb141905fn1">*</xref>

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition*

Wang Jun†, Hu Hai-Yang, Deng Can, He Yun-Rui, Wang Qi, Duan Xiao-Feng, Huang Yong-Qing, Ren Xiao-Min

Cross-sectional TEM images of dislocation propagation in the five-layer QD dislocation filter, and (b) amplified image of the labeled region in panels (a). The scale bar is 200 nm in both images.