Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition<xref ref-type="fn" rid="cpb141905fn1">*</xref>

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition*

Wang Jun†, Hu Hai-Yang, Deng Can, He Yun-Rui, Wang Qi, Duan Xiao-Feng, Huang Yong-Qing, Ren Xiao-Min

AFM images (1 μm×1 μm) of the samples with (a) three-dot layers and (b) five-dot layers.