Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition*
Wang Jun†, Hu Hai-Yang, Deng Can, He Yun-Rui, Wang Qi, Duan Xiao-Feng, Huang Yong-Qing, Ren Xiao-Min
       
Schematic diagrams of the growth process for GaAs/Si samples with InAs QDs serving as dislocation filters.