Improved performance of AlGaN/GaN HEMT by N<sub>2</sub>O plasma pre-treatment<xref ref-type="fn" rid="cpb141309fn1">*</xref>

Improved performance of AlGaN/GaN HEMT by N₂O plasma pre-treatment*

Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†

(a) Plots of trap state time constant versus gate voltage, and (b) plots of trap state density versus energy for N₂O-treated and non-N₂O-treated devices.