Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment*
Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†
       
Variations of conductance with radial frequency for (a) N2O and (b) non-N2O treated HEMTs at selected gate voltages.