Improved performance of AlGaN/GaN HEMT by N
2
O plasma pre-treatment
*
Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†
Comparison of pulsed I – V characteristics between (a) with and (b) without N
2
O plasma pre-treatment at point of ( V
GSQ
, V
DSQ
) = (−8 V, 0 V).