Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment*
Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†
       
Comparison of pulsed I – V characteristics between (a) with and (b) without N2O plasma pre-treatment at point of ( V GSQ, V DSQ) = (−8   V, 0 V).