Improved performance of AlGaN/GaN HEMT by N
2
O plasma pre-treatment
*
Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†
Transfer characteristics of (a) N
2
O plasma-pre-treated and (b) non-treated HEMTs at V
d
− 10 V.