Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment*
Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†
       
Transfer characteristics of (a) N2O plasma-pre-treated and (b) non-treated HEMTs at V d − 10 V.