Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation<xref ref-type="fn" rid="cpb140887fn1">*</xref>

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation*

Zheng Xue-Feng^a),^b)†, Fan Shuang^a),^b), Chen Yong-He^a),^b), Kang Di^a),^b), Zhang Jian-Kun^a),^b), Wang Chong^a),^b), Mo Jiang-Hui^c), Li Liang^c), Ma Xiao-Hua^b), Zhang Jin-Cheng^a),^b), Hao Yue^a),^b)

Schematic energy band diagram of the 2D-VRH transport mechanism in dual-gate structure when a negative bias is applied between the electrodes of G1 and G2, which illustrates the electron transport process via surface states between two electrodes, resulting in the lateral surface leakage current in AlGaN/GaN HEMT.