Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation<xref ref-type="fn" rid="cpb140887fn1">*</xref>

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation*

Zheng Xue-Feng^a),^b)†, Fan Shuang^a),^b), Chen Yong-He^a),^b), Kang Di^a),^b), Zhang Jian-Kun^a),^b), Wang Chong^a),^b), Mo Jiang-Hui^c), Li Liang^c), Ma Xiao-Hua^b), Zhang Jin-Cheng^a),^b), Hao Yue^a),^b)

Variations of reverse surface leakage current with gate bias voltage ( V _G1) at temperatures ranging from 298 K to 423 K. The device under test is an SiN passivated HEMT with a 20-nm-thick Al_0.3Ga_0.7N barrier layer.