Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values<xref ref-type="fn" rid="cpb141635fn1">*</xref>

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values*

Ma Xiao-Hua^a), Zhang Ya-Man^a), Wang Xin-Hua^b), Yuan Ting-Ting^b), Pang Lei^b), Chen Wei-Wei^a), Liu Xin-Yu^b)†

Comparison of lateral field distribution along the channel/ buffer interface for HEMTs with different channel thickness values (50 nm and 150 nm), calculated at V _DS = 50 V in off state ( V _GS = −6 V), between samples A and B.