Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values<xref ref-type="fn" rid="cpb141635fn1">*</xref>

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values*

Ma Xiao-Hua^a), Zhang Ya-Man^a), Wang Xin-Hua^b), Yuan Ting-Ting^b), Pang Lei^b), Chen Wei-Wei^a), Liu Xin-Yu^b)†

Cross-sectional distributions of conduction band edge energy along the channel/buffer interface when a pinch-off voltage of −6 V is applied to the gate with values of V _DS = 1 V, 10 V, and 50 V for (a) sample A and (b) sample B. The insets show the entire energy barriers. The barrier height decreases as the drain voltage increases. DIBL of sample B is more significant.