Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values<xref ref-type="fn" rid="cpb141635fn1">*</xref>

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values*

Ma Xiao-Hua^a), Zhang Ya-Man^a), Wang Xin-Hua^b), Yuan Ting-Ting^b), Pang Lei^b), Chen Wei-Wei^a), Liu Xin-Yu^b)†

Conduction band energy diagrams of devices with different channel thickness values (50 nm and 150 nm) (a) along the vertical cut-lines passing through the center of the gate and down through the buffer at V _DS = 0 V and V _GS = 0 V, and (b) along the horizontal cut-lines in the channel/ buffer interface, at V _DS = 0 V and V _GS = −6 V.