Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values<xref ref-type="fn" rid="cpb141635fn1">*</xref>

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values*

Ma Xiao-Hua^a), Zhang Ya-Man^a), Wang Xin-Hua^b), Yuan Ting-Ting^b), Pang Lei^b), Chen Wei-Wei^a), Liu Xin-Yu^b)†

Off-state breakdown characteristics measured at V _GS = −6 V (below V _TH) of sample A (a) and sample B (b). The BV _off is defined as the V _DS at which I _D of 1 mA/mm is reached.