Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values*
Ma Xiao-Huaa), Zhang Ya-Mana), Wang Xin-Huab), Yuan Ting-Tingb), Pang Leib), Chen Wei-Weia), Liu Xin-Yub)†
       
Cross-sectional schematic diagram of AlGaN/GaN HEMTs (samples A and B) used in this work.