Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values
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Ma Xiao-Hua
a)
, Zhang Ya-Man
a)
, Wang Xin-Hua
b)
, Yuan Ting-Ting
b)
, Pang Lei
b)
, Chen Wei-Wei
a)
, Liu Xin-Yu
b)†
Cross-sectional schematic diagram of AlGaN/GaN HEMTs (samples A and B) used in this work.