Effect of the thickness of InGaN interlayer on <em> a</em>-plane GaN epilayer<xref ref-type="fn" rid="cpb141503fn1">*</xref>

Effect of the thickness of InGaN interlayer on a-plane GaN epilayer*

Wang Jian-Xia^a),^b)†, Wang Lian-Shan^a)‡, Zhang Qian^b), Meng Xiang-Yue^b), Yang Shao-Yan^a), Zhao Gui-Juan^a), Li Hui-Jie^a), Wei Hong-Yuan^a), Wang Zhan-Guo^a)

SEM images of the annealed LT-GaN/InGaN/sapphire templates for samples A–F [corresponding to panels (a)–(f)]. The direction of the arrow represents the [0001] orientation of a -GaN.