Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells*
Wang Qianga),b), Ji Zi-Wu†a), Wang Fana), Mu Qia), Zheng Yu-Juna), Xu Xian-Gangc), Lü Yuan-Jied), Feng Zhi-Hongd)
       
Excitation power dependences of the peak energy (a) and the FWHM (b) for P D, measured at 6 K and 300 K.