Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells
*
Wang Qiang
a),
b)
, Ji Zi-Wu†
a)
, Wang Fan
a)
, Mu Qi
a)
, Zheng Yu-Jun
a)
, Xu Xian-Gang
c)
, Lü Yuan-Jie
d)
, Feng Zhi-Hong
d)
Excitation power-dependent PL spectra of InGaN/GaN MQWs measured at 6 K (a) and 300 K (b).