Theoretical study of the optical gain characteristics of a Ge1− xSn x alloy for a short-wave infrared laser*
Zhang Dong-Liang, Cheng Bu-Wen†, Xue Chun-Lai, Zhang Xu, Cong Hui, Liu Zhi, Zhang Guang-Ze, Wang Qi-Ming
       
Net gains versus injected carrier density (lasing wavelengths are 2000 nm and 2050 nm at 200 K, and 2100 nm at 300 K).