Theoretical study of the optical gain characteristics of a Ge1− xSn x alloy for a short-wave infrared laser |
(a) Total optical gains of Ge1− x Sn x ( x = 0, 3, 6, 7.8, 10, 12, 15% respectively) with a same injected carrier density (5 × 1018/cm3) and doping level (5 × 1018/cm3) at room temperature. (b) Optical gain spectra of alloy with 7.8% Sn at different temperatures. |