Preparation of graphene on Cu foils by ion implantation with negative carbon clusters
Preparation of graphene on Cu foils by ion implantation with negative carbon clusters |
| Fig.#cod#x00A0;5. Raman spectra of graphene prepared by ion implantation with C 1 at 5#cod#x00A0;kV, C 2 at 10#cod#x00A0;kV, and C 4 at 20#cod#x00A0;kV, which means they have the same energy per atom, 5#cod#x00A0;keV per atom. The carbon doses are also the same: 4#cod#x00D7;10 15 atomscm 2 . The inset shows SRIM simulation of depth profile of C atoms in Cu. The clusters C 1 5#cod#x00A0;keV, C 2 10#cod#x00A0;keV, and C 4 20#cod#x00A0;keV have identical C distribution according to the simulation. |
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