GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics<xref ref-type="fn" rid="cpb141247fn1">*</xref>

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics*

Zhao Lian-Feng, Tan Zhen, Wang Jing, Xu Jun†

Fig. 2. Transfer I ds #cod#x2013; V gs characteristics of the fabricated GaSb p-channel MOSFETs. The inset shows the gate leakage current characteristics of the samples.