High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition*
Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao†, Zhang Bao-Lin‡
Fig. 4. Comparison of SEM images of GaSb films fabricated at a low VIII ratio of 0.5 S3 a1; S2 a2; S4 a3 and a high VIII ratio of 5 S15 b1; S16 b2.