High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition*
Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao†, Zhang Bao-Lin‡
Fig. 2. Comparison of SEM images of GaSb films fabricated at a low temperature of 500 #cod#x00B0;C for S11 a1, S2 a2, and S8 a3 and at a high temperature of 600 #cod#x00B0;C for S6 b1, S4 b2, S9 b3, S15 b4, respectively.